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| ECO-PACTM 2 Power MOSFET in ECO-PAC 2 Single MOSFET Die PSMG 150/01* X18 I K10/11 A1 L N 8/9 VDSS ID25 RDS(on) trr = 100 V = 165 A = 8 m < 250 ns Preliminary Data Sheet MOSFET Symbol V DSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C (MOSFET chip capability) External lead (current limit) TC = 25C 1) TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Test Conditions K13 K15 *NTC optional Maximum Ratings 100 100 20 30 165 76 720 180 60 3 5 400 V V V V A A A A mJ J V/ns W Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 3000V electrical isolation * Low drain to tab capacitance(< 25pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier * UL certified, E 148688 Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * Easy assembly * Space savings * High power density Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2.0 4.0 100 100 2 8 60 90 9400 3200 1660 50 90 140 65 400 65 220 0.30 0.2 V V nA A mA m S pF pF pF ns ns ns ns nC nC nC K/W K/W VDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 V, VDS = 0 VDS = VDSS; TJ = 25C VGS = 0 V; TJ = 125C VGS = 10 V, ID = 90 A 1) VDS = 10 V; ID = 90 A 2) VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 * VDSS, ID = 90 A RG = 1 (External) VGS = 10 V, VDS = 0.5 * VDSS, ID = 90 A with heatsink compound (0.42 K/m.K; 50 m) Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Note: 1) 2) Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, 1) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 180 720 1.5 250 A A V ns C A Package style and outline Dimensions in mm (1mm = 0.0394") IF = 50A,-di/dt = 100 A/s, VR = 100 V 1.1 13 Pulse width limited by TJM Pulse test, t 300 s, duty cycle d 2 % Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Module Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 200 TJ=25OC VGS=10V 9V 8V 200 7V TJ=125OC VGS=10V 9V 8V 7V 6V 150 150 6V ID - Amperes ID - Amperes 100 5V 100 5V 50 50 0 0 0.5 1.0 1.5 2.0 0.0 0 1 2 3 4 5 VDS - Volts Figure 1. Output Characteristics at 25 C O VDS - Volts Figure 2. Output Characteristics at 125OC 1.8 VGS = 10V 2.0 TJ = 125 C O RDS(ON) - Normalized RDS(ON) - Normalized 1.6 1.4 1.2 1.8 1.6 1.4 1.2 1.0 0.8 25 ID=180A VGS=10V VGS=15V TJ = 25OC 1.0 0.8 ID=90A VGS=10V VGS=15V 0 50 100 150 200 50 75 100 125 150 ID - Amperes Figure 3. RDS(on) normalized to 15A/25OC vs. ID TJ - Degrees C Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 100 100 80 75 ID - Amperes Lead Current Limit 50 ID - Amperes 60 40 20 0 TJ = 125oC 25 TJ = 25oC 0 -50 -25 0 25 50 75 100 125 150 2 4 6 8 TC - Degrees C Figure 5. Drain Current vs. Case Temperature VGS - Volts Figure 6. Admittance Curves 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 PSMG 150/01 15 12 VDS=50V ID=90A IG=10mA Ciss 10000 9 6 3 0 Capacitance - pF F = 100kHz Coss VGS - Volts Crss 0 50 100 150 200 250 300 350 400 1000 0 5 10 15 20 25 30 35 40 Gate Charge - nC Figure 7. Gate Charge 200 100 VGS= 0V Figure 8. Capacitance Curves VDS - Volts 200 175 150 1 ms ID - Amperes ID - Amperes 125 100 75 50 25 0 TJ=125OC TJ=25OC 10 ms 10 TC = 25 C O DC 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 VSD - Volts VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 0.40 0.20 Figure 10. Forward Bias Safe Operating Area R(th)JC - K/W 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Typical Transient Thermal Resistance 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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